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Zastosuj identyfikator do podlinkowania lub zacytowania tej pozycji: http://hdl.handle.net/20.500.12128/23700
Tytuł: Effect of the Indentation Load on the Raman Spectra of the InP Crystal
Autor: Chrobak, Dariusz
Dulski, Mateusz
Ziółkowski, Grzegorz
Chrobak, Artur
Słowa kluczowe: semiconductors; InP; Raman spectroscopy; indentation
Data wydania: 2022
Źródło: Materials, Vol. 15, iss. 15 (2022), art. no. 5098
Abstrakt: Nanoindentations and the Raman spectroscopy measurements were carried out on the (001) surface of undoped and S-doped InP crystal. The samples were indented with the maximum load ranging from 15 mN to 100 mN. The phase transition B3!B1 was not confirmed by spectroscopic experiments, indicating a plastic deformation mechanism governed by dislocations activity. Increasing the maximum indentation load shifts and the longitudinal and transverse optical Raman bands to lower frequencies reveals a reduction in the elastic energy stored in the plastic zone right below the indentation imprint. Mechanical experiments have shown that a shift in Raman bands occurs alongside the indentation size effect. Indeed, the hardness of undoped and S-doped InP crystal decreases as a function of the maximum indentation load.
URI: http://hdl.handle.net/20.500.12128/23700
DOI: 10.3390/ma15155098
ISSN: 1996-1944
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